t4 - lds -0 318 , rev . 1 (9 /16/13 ) ?201 3 microsemi corporation page 1 of 7 2n7371 available on commercial versions pn p darlington high power silicon transistor qualified per mil - prf - 19500/ 623 qualified levels: jan, jantx, and jantxv description this high power pn p transistor is rated at 12 amps and is military qualified up to the jantxv level for high reliability applications . this to - 254aa low - profile design offers flexible mounting options . to - 254 aa package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n737 1. ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/ 623. (see part n omenclature for all available options.) ? rohs compliant versions available (commercial grade only) . applications / benefits ? high power operation . ? flexible, low - profile to - 254aa package maximum ratings @ t c = +25 o c unless otherwise noted. msc C law re nce 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, enn is, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit jun ction and storage temp erature t j and t stg - 65 to + 20 0 o c thermal resistance junction - to - case r ? jc 1.5 o c /w collector - base voltage v cbo - 10 0 v collector - emitter voltage v ceo - 100 v emitter - base voltage v ebo - 5.0 v total power dissipation (see figure 1 ) p t 100 w base current i b - 0.2 a collector current i c -12 a downloaded from: http:///
t4 - lds -0 318 , rev . 1 (9 /16/13 ) ?201 3 microsemi corporation page 2 of 7 2n7371 mechanical and packaging ? case: nickel p lated crs s teel ? terminals: ceramic f eed - though, h ot s older d ip, ni p lated alloy 52, c opper core. rohs compliant pur e tin dip is available for commercial v ersions only . ? marking: part number, date code, and polarity symbol ? polarity: see s chematic on last page ? weight: approximately 6.5 grams ? see p ackage d imensions on last page. part nomenclature jan 2n737 1 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number rohs compliance e3 = rohs co mpliant ( available on commercial grade only ) blank = non - rohs compliant symbols & definitions symbol definition i b base current: the value of the dc current into the base terminal. i c collector current: the value of the dc current into the collector terminal. i e emitter current: the value of the dc current into the emitter terminal. t c case temperature: the temperature measured at a specified location on the case of a device. v cb collector - base voltage: the dc voltage between the collector and the base. v cbo collector - base voltage, base open: the voltage between the collector and base terminals when the emitter terminal is open - circuited. v cc collector - supply voltage: the supply voltage applied to a circuit connected to the collector. v ce collector - emitter voltage: the dc voltage between the collector and the emitter. v ceo collector - emitter voltage, base open: the voltage between the collector and the emitter terminals when the base terminal is open - circuited. v eb emitter - base voltage: the dc voltage between the emitter and the base v ebo emitter - base voltage, collector open: the voltage between the emitter and base terminals with the collector terminal open - circuited. downloaded from: http:///
t4 - lds -0 318 , rev . 1 (9 /16/13 ) ?201 3 microsemi corporation page 3 of 7 2n7371 electrical characteristics @ t c = + 25 o c unless otherwise noted characteristics symbol min. max. unit of f charact eristics collector - emitter breakdown voltage i c = - 100 ma v (br)ceo - 100 v collector - emitter cutoff current v ce = - 50 v i ceo - 1.0 ma collector - emitter cutoff current v ce = - 10 0 v, v be = 1.5 v v ce = - 100 v, v be = 1.5 v , t a = + 150 oc i cex - 20 -1 .0 a ma emitter - base cutoff current v eb = -5 .0 v i ebo - 2. 0 ma on characteristics forward - current transfer ratio i c = -6 .0 a, v ce = - 3.0 v i c = -12 .0 a, v ce = - 3.0 v i c = -6 .0 a, v ce = - 3.0 v , t a = +1 50 oc h fe 1,000 150 300 18,000 collector - emitt er saturation voltage i c = - 12 a, i b = - 12 0 ma v ce(sat) - 3.0 v base - emitter saturation voltage i c = - 12 a, i b = - 12 0 ma v be(sat) - 4.0 v dynami c characteristics magnitude of common emitter small - signal short - circuit forward current transfer ratio i c = - 5 a, v ce = - 3.0 v, f = 1 mhz |h fe | 10 250 downloaded from: http:///
t4 - lds -0 318 , rev . 1 (9 /16/13 ) ?201 3 microsemi corporation page 4 of 7 2n7371 electrical characteristics @ t c = 25 o c unless otherwise noted. (continued) switchin g characteristics turn - on time v cc = - 30 v, i c = -12 a; i b1 = - 12 0 ma t on 2.0 s turn - off time v cc = - 30 v, i c = -12 a; i b1 = i b2 = - 12 0 ma t off 10 s saf e operatin g area (see f igure below and mil - std - 750,test method 3053 ) dc tests t c = +25 c, t 1 second, 1 cycle test 1 v ce = - 8. 3 v, i c = - 12 a test 2 v ce = - 30 v, i c = - 3.3 a test 3 v ce = -9 0 v, i c = -15 0 ma * pulse test: pulse width 300 sec, d uty cycle 2% . v ce C collector to emitter voltage (volts ) safe operating area i c = collector current (amperes) downloaded from: http:///
t4 - lds -0 318 , rev . 1 (9 /16/13 ) ?201 3 microsemi corporation page 5 of 7 2n7371 graphs t c (c) (case) figure 1 temperature -p ower d erating g raph notes: 1. all devices are capable of operating at t j specified on this curve. any parallel line to this curve will intersect the appropriate power for the desired maximum t j allowed. 2. derate design curve constrained by the maximum junction temperature (t j +200c) and power rating specified. (see maximum ratings .) 3. derate design curve chosen at t j +150c, where the maximum temperature of electrical test is performed . 4. derate design curves chosen at t j +125c, and +110c to show power rating where most users want to limit t j in their applicatio n. dc operation maximum rating (w) downloaded from: http:///
t4 - lds -0 318 , rev . 1 (9 /16/13 ) ?201 3 microsemi corporation page 6 of 7 2n7371 graphs (continued) time (s) figure 2 thermal i mpedance g raph theta ( c/w) downloaded from: http:///
t4 - lds -0 318 , rev . 1 (9 /16/13 ) ?201 3 microsemi corporation page 7 of 7 2n7371 package dimensions schematic dimensions ltr inch millimeters min max min ma x bl 0 .535 0 .545 13.59 13.84 ch 0 .249 0 .260 6.32 6.60 ld 0 .035 0 .045 0.89 1.14 ll 0 .510 0 .570 12.95 14.48 lo 0 .150 bsc 3.81 bsc ls 0 .150 bsc 3.81 bsc mhd 0 .139 0 .149 3.53 3.78 mho 0 .665 0 .685 16.89 17.40 tl 0 .790 0 .800 20.07 20.32 tt 0 .040 0 .050 1.02 1.27 tw 0 .535 0 .545 13.59 13.84 term 1 base term 2 collector term 3 emitter notes: 1. dimensions are in inches. millimeters are given for information only. 2. all terminals are isolated from cas e. 3. protrusion of ceramic eyel ets included in dimension ll . 4. in accordance with asme y14.5m, diameters are equivalent to x symbology. downloaded from: http:///
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